Remote plasma apparatus for processing sustrate with two types of gases

ABSTRACT

In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O 2 ) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH 4 ) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

BACKGROUND OF THE INVENTION

[0001] This invention relates to substrate processing and, moreparticularly, to a plasma chemical vapor deposition (plasma CVD) byusing a reaction between a gas and radicals obtained from another gas.

[0002] As is well known, formation of a film or a layer is one of theprimary steps in the fabrication of modem semiconductor devices and,such a film or a layer can be deposited by a CVD process, for example, athermal CVD process or a plasma CVD process (plasma-enhanced CVDprocess). Especially, a remote plasma CVD process is an improved one ofplasma CVD processes and can form a desired thin film on a substrate ora wafer with suppression of damage arising from plasma.

[0003] In an exemplary remote plasma CVD process, two types of gases areused. One type of gases is a plasma material gas that is decomposed,and/or energized, and changed into plasma including radicals and excitedspecies, while another type of gases is a deposition material gas thatreacts with the radicals and excited species in a gas phase reaction.For example, the former is oxygen (O₂) gas while the latter ismonosilane or silane (SiH₄) gas. In a remote plasma CVD process, oxygengas is at first energized and changed into plasma within a plasmageneration region. The plasma includes excited species and radicalswhich are excited oxygen atoms, excited oxygen molecules, oxygen atoms,oxygen molecules, and ozone molecules. The radicals and excited speciesincluded in the plasma are supplied into a substrate processing regionthat is separated or isolated from the plasma generation region.Independently of the excited species and radicals, monosilane gas isalso supplied into the substrate processing region, where a gas phasereaction between the oxygen gas and the monosilane gas occurs. The gasphase reaction produces precursors which are for silicon dioxide (SiO₂)and are for example SiH_(x), SiH_(x)O_(y), SiO_(y), and so on. Theprecursors are adhered to a substrate or a wafer arranged within thesubstrate processing region and are subjected to oxidation, thermaldissociation and so forth, so that the silicon dioxide film are formedon the substrate or the wafer. Silicon nitride (Si₃N₄) film and anamorphous silicon (a-Si) film can be formed in the way similar to theabove-mentioned remote plasma CVD process.

[0004] Some types of apparatuses and methods for processing with remoteplasma CVD techniques are shown in Japanese Patent Laid-Open Nos.H8-167596 and H8-194942, which are incorporated herein by reference.

[0005] One problem that arises during such remote plasma CVD processesis that a deposition material gas, such as silane gas, flows back intothe plasma generation region from the substrate processing region. Incase of silane gas of the deposition material gas, the backward flow ofthe deposition material gas results in excess formation of hydrogenatoms (H) and/or hydrogen molecules (H₂), so that the silicon dioxidefilm formed on the substrate or wafer includes a great deal of H or OH.The problem is discussed in Japanese Patent Laid-Open No. H8-45858,which is incorporated herein by reference.

SUMMARY OF THE INVENTION

[0006] It is therefore an object of the present invention to provide animproved remote plasma apparatus which can suppress the backward flow ofthe deposition material gas, such as monosilane gas.

[0007] According to one aspect of the present invention, a remote plasmaapparatus comprises a body, an energy source, a plate, and a substratesupporter. The body defines a cavity comprising a plasma generationregion and a processing region and has first and second gas inlets. Thefirst gas inlet communicates with the plasma generation region tointroduce a first gas into the plasma generation region directly orindirectly, while the second gas inlet communicates with the processingregion to supply a second gas into the processing region directly orindirectly.

[0008] The energy source is arranged and adapted to apply energy withinthe plasma generation region to generate, from the first gas, plasmaincluding radicals. The energy source may be a radio frequency (RF)supplier or a microwave power supplier.

[0009] The plate is arranged between the plasma generation region andthe processing region and is formed with a plurality of perforated holesthrough which the radicals pass. The plate is designed such thataperture ratio of the perforated holes to the plate is not greater thanfive percent. Each perforated hole may have a diameter not larger thanthree millimeter.

[0010] The substrate supporter is arranged within the processing regionand is adapted to support a substrate to be processed by using areaction between the radicals passing through the perforated holes andthe second gas supplied through the second gas inlet.

[0011] In the above structure where the body has an inner side wall, theplate may be arranged with no gap left between the plate and the innerside wall.

[0012] The remote plasma apparatus can be used in a film forming processwhere an oxygen-containing gas is supplied as the first gas into theplasma generation region through the first gas inlet, while asilicon-containing gas is supplied as the second gas into the processingregion. For example, the oxygen-containing gas is oxygen (O₂) gas, whilethe silicon-containing gas is monosilane or silane (SiH₄) gas.

[0013] With the above structure, the remote plasma apparatus cansuppress the backward flow of the deposition material gas into theplasma generation region. Therefore, the excess formation of hydrogenatoms (H) and/or hydrogen molecules (H₂) is also suppressed, namely, thehigh quality silicon dioxide film can be obtained.

[0014] These and other aspects of the present invention, as well as itsadvantages and features are described as preferred embodiments in moredetail in conjunction with the text below and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015]FIG. 1 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith one embodiment of the present invention;

[0016]FIG. 2 is a plain view of the plate arranged within the vacuumchamber of the remote plasma CVD apparatus depicted in FIG. 1;

[0017]FIG. 3 is a graph schematically showing undesirable distributionof the radicals and the excited species which are included in plasma;

[0018]FIG. 4 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith another embodiment of the present invention;

[0019]FIG. 5 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith another embodiment of the present invention;

[0020]FIG. 6 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith another embodiment of the present invention;

[0021]FIG. 7 is a bottom plain view of the plate depicted in FIG. 6;

[0022]FIG. 8 is a partially enlarged, cross-sectional view of the platedepicted in FIG. 6;

[0023]FIG. 9 is an illustrative cross-sectional view of the platedepicted in FIG. 6, which shows a flow of a deposition material gas andradicals and excited species;

[0024]FIG. 10 is an illustrative cross-sectional view of a modificationof the plate depicted in FIG. 6;

[0025]FIG. 11 is a bottom plain view of a first partition included inthe modification depicted in FIG. 10;

[0026]FIG. 12 is a bottom plain view of a second partition included inthe modification depicted in FIG. 11;

[0027]FIG. 13 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith another embodiment of the present invention;

[0028]FIG. 14 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith another embodiment of the present invention;

[0029]FIG. 15 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith another embodiment of the present invention;

[0030]FIG. 16 is a schematic, vertical, cross-sectional view of a remoteplasma apparatus, such as a remote plasma CVD apparatus, in accordancewith another embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0031] Referring to FIG. 1, a remote plasma apparatus according to anembodiment of this invention is a remote plasma CVD apparatus whereoxygen gas (O₂) of a plasma material gas and silane (SiH₄) gas of adeposition material gas are used to deposit a silicon dioxide film on asubstrate or a wafer. As mentioned above, the plasma material gas isdecomposed and changed into plasma including radicals and excitedspecies, while the deposition material gas reacts with the radicals andexcited species in the gas phase reaction. To obtain a silicon dioxidefilm, the plasma material gas may be another oxygen-containing gas, suchas a nitrous oxide gas or a nitric oxide gas, while the depositionmaterial gas may be another silicon-containing gas, such as a disilanegas or a higher silane gas, or a liquid silicon material, such as a TEOS(tetraethoxysilane). To obtain other films, the plasma material gas andthe deposition material gas may be other kinds of gases which can beselected by a skilled person.

[0032] The illustrated remote plasma CVD apparatus comprises a vacuumchamber 10 having a chamber wall 11. The vacuum chamber 10 defines acavity comprising a plasma generation region 12 and a substrateprocessing region 13. The vacuum chamber 10 is provided with a gas inlet21, a ring-shaped injector 22, and a gas outlet or an exhaust outlet 23.The gas inlet 21 is for introducing oxygen (O₂) gas into the plasmageneration region 12, while the injector 22 is for dispersing orinjecting silane (SiH₄) gas into the substrate processing region 13. Thegas outlet 23 is connected with an exhaust emission control device or anexternal vacuum pump (not shown) and is for exhausting or evacuating, tothe outside of the apparatus, the remainder of the gas mixture that isnot deposited in a film.

[0033] On the upper side of the illustrated vacuum chamber 10, anantenna 31 electrically connected to a power source 30 and a dielectricwindow 32 are arranged. The power source 30 can supply a high-frequencyenergy into the plasma generation region through the antenna 31 and thedielectric window 32, which may be other high-frequency energytransparent material. As understood from the discharge structure forgenerating plasma, the remote plasma CVD apparatus applies an inductioncoupled discharge. Instead of the induction coupled discharge, theremote plasma CVD apparatus may apply a capacitively-coupled dischargeor a microwave discharge with a suitable discharge mechanism arranged onthe vicinity of the plasma generation region.

[0034] The illustrated remote plasma CVD apparatus further comprises aplate 40 and a susceptor 50. The illustrated plate 40 is formed with aplurality of perforated holes 41 and is arranged between the plasmageneration region 12 and the substrate processing region 13 with no gapleft between the plate 40 and the chamber wall 11. In particular, theplate 40 of this embodiment defines the plasma generation region 12 andthe substrate processing region 13 in cooperation with the chamber wall11. The susceptor 50 is for supporting a substrate or wafer and is alsocalled a wafer support pedestal.

[0035] Referring to FIG. 2, the example of the plate 40 is rectangularand has a plane area of 400 mm×500 mm. In addition, the plate 40 has onehundred perforated holes 41. Each of the perforated holes 41 has acylindrical shape where a diameter is 11 mm and a length is 20 mm, sothat aperture ratio of the perforated holes 41 to the entire plate 40 isnot greater than five percent. The perforated holes 41 may have othershapes. The plate 40 may be circular shaped and the vacuum chamber 10may have a cylindrical chamber wall.

[0036] In the remote plasma CVD apparatus with the plate 40, thepressure of the plasma generation region 12 is higher than the pressureof the substrate processing region 13 under the condition of thesubstrate processing, because the plate is designed to meet the apertureratio. For example, if O₂ gas is introduced into the plasma generationregion 12 at flow rate of 1 SLM and the pressure of the substrateprocessing region 13 is controlled with the vacuum pump (not shown) tobe 30 Pa, the pressure of the plasma generation region 12 becomes 35 Pa.

[0037] The higher pressure of the region 12 results in the suppressionof the silane gas flowing back into the plasma generation region 12 fromthe substrate processing region 13. That is, the plate 40 with theperforated holes 41 can suppress the silane gas flowing back into theplasma generation region 12 from the substrate processing region 13.Herein, the arrangement of the illustrated perforated holes 41 isuniform in the plane of the plate 40, but the plate 40 may have anotherarrangement where the number of the perforated holes 41 at the center ofthe plate 40 is larger than one of the perforated holes 41 at theperipheral part of the plate 40.

[0038] In order to more effectively suppress the back flow of the silanegas, the diameter R of the perforated hole 41 can be smaller than one ofthe illustrated perforated hole 41. In detail, each perforated hole 41may have a diameter not larger than three millimeter. For example, theplate 40, formed with one hundred perforated holes 41 and having an areaof 400 mm×500 mm, is designed so that each perforated holes 41 has acylindrical shape where a diameter is 2 mm and a length is 10 mm. Inthis case, if O₂ gas is introduced into the plasma generation region 12at flow rate of 1 SLM and the pressure of the substrate processingregion 13 is controlled with the vacuum pump (not shown) to be 30 Pa,the pressure of the plasma generation region 12 becomes 58 Pa. Thus, thepressure difference between the regions 12 and 13 becomes larger, if thediameter of the perforated hole 41 becomes smaller under the conditionwhere the length of the perforated hole 41 is unchanged. The largepressure difference causes the back flow of the silane gas to besuppressed effectively.

[0039] It is here assumed that there is a large interval betweenneighboring ones of the perforated holes 41 under the condition that theaperture ratio and the diameter of the perforated holes are restricted.Under the assumption, the gas including the radicals and the excitedspecies has undesirable density distribution at the vicinity of thesubstrate to be processed, as shown in FIG. 3. Taking the influence ofthe hole interval upon the gas density distribution, the intervals (D1,D2, D3) shown in FIG. 2 may be shorter than the distance (H) shown inFIG. 1 between the plate 40 and the substrate supported on the susceptor50, in order to obtain more uniform gas distribution.

[0040] Now, explanation will be made about the film forming process inthe example of the remote plasma CVD apparatus according to theabove-mentioned embodiment. In the example of the remote plasma CVDapparatus, the plate 40 is formed with one hundred perforated holes 41and has a rectangular shape whose area is 400 mm×500 mm. Each perforatedhole 41 has a cylindrical shape where a diameter is 2 mm and a length is10 mm. The intervals D1, D2, and D3 between neighboring ones of theperforated holes 41 are 46 mm, 36 mm, 58 mm, respectively, while thedistance H between the plate and the substrate supported on thesusceptor 50 is 100 mm.

[0041] Into the vacuum chamber 10 kept in vacuum, the oxygen gas isintroduced at flow rate of 1 SLM and the pressure of the substrateprocessing region 13, especially, the pressure on the vicinity of thesubstrate is controlled with the vacuum pump (not shown) to be 30 Pa. Inthis embodiment, the pressure of the plasma generation region 12 becomes58 Pa, because of the plate 40. That is, the pressure of the plasmageneration region 12 is about twice pressure of the substrate processingregion 13.

[0042] Under the condition, the antenna 31 is supplied with the highfrequency energy from the power source 30, thereby the oxygen plasma isgenerated in the plasma generation region 12. The oxygen plasma includesexcited species and radicals which are excited oxygen atoms, excitedoxygen molecules, oxygen atoms, oxygen molecules, and ozone molecules,in addition to electrons and ions. It is noted here that the plasmadensity within the plasma generation region 12 is about 10⁸˜10¹⁰ cm⁻³,while the plasma density between the plate 40 and the substratesupported on the susceptor 50 is less than 10⁶ cm⁻³. Hence, very fewelectrons and ions practically reach the substrate processing region 13and influence on the film forming.

[0043] Gas including the radicals and excited species is suppliedthrough the perforated holes 41 and diffuses into the substrateprocessing region 13. Independently of the gas including the excitedspecies and radicals, the monosilane gas is also supplied into thesubstrate processing region 13 at flow rate of 5 SCCM. The gas includingthe radicals and excited species and the monosilane gas react with eachother, and result in producing precursors for silicon dioxide (SiO₂),for example, SiH_(x), SiH_(x)O_(y), SiO_(y), and so on. The precursorsare adhered to the substrate supported on the susceptor 50 and aresubjected to oxidation, thermal dissociation and so forth, so that thesilicon dioxide film are formed on the substrate.

[0044] With the structure, the almost no monosilane gas can flow backinto the plasma generation region 12, because the pressure of the plasmageneration region 12 is about twice pressure of the substrate processingregion 13 as mentioned above. Therefore, the excess formation ofhydrogen atoms (H) and/or hydrogen molecules (H₂) is also suppressed,namely, the high quality silicon dioxide film can be obtained.

[0045] As mentioned above, the plasma density between the plate 40 andthe substrate supported on the susceptor 50 is controlled to beextremely low. The low plasma density results in very low plasma damageon the substrate 30, in comparison with the general parallel plateplasma CVD of the conventional configurations. The obvious advantage ofthe low plasma damage appears on the specific silicon surface whichcomprise the MOS interface. If the silicon dioxide film is deposited ona single crystal silicon substrate by the use of the general parallelplasma CVD, the density of the MOS interface state becomes 10¹¹˜10¹²cm⁻²eV⁻¹. If the silicon dioxide film is deposited on a single crystalsilicon substrate by the use of the remote plasma CVD according to thepresent invention, the density of the MOS interface state is controlledto be 10¹⁰ cm⁻²eV⁻¹ lower than that of general parallel plasma CVD.

[0046] Referring to FIG. 4, a modification of the remote plasma CVDapparatus illustrated in FIG. 1 comprises a gas inlet 24 and a planarelectrode 33, instead of the gas inlet 21 and the antenna 31 and thedielectric window 32, and further comprises a closure electrode 60. Theplanar electrode 33 is electrically connected to the power source 30 andelectrically delivers the high frequency energy into the plasmageneration region 12. In addition, the illustrated planar electrode 33is gas distribution structure, for example, an O₂ gas distributionmanifold and is connected with the gas inlet 24. The closure electrode60 is formed with a plurality of holes which the radicals and excitedspecies pass through, and is electrically grounded. It is hereindesirable that the diameter of the hole of the closure electrode 60 issubstantially equal to or less than “Debye length” of the plasma to begenerated in the plasma generation region 12.

[0047] Referring to FIG. 5, a modification of the remote plasma CVDapparatus illustrated in FIG. 4 comprises the plate 40 made ofconductive material, such as metal. The plate 40 is electricallygrounded and serves as a closure electrode. In this modification, eachof the perforated holes 41 has the diameter which is substantially equalto or less than “Debye length” of the plasma to be generated in theplasma generation region 12.

[0048] It is assumed that the plate 40 is formed with one hundredperforated holes 41 and has a rectangular shape whose area is 400 mm×500mm and each perforated holes 41 has a cylindrical shape where a diameteris 2 mm and a length is 10 mm. In addition, it is assumed that theoxygen gas is introduced into the vacuum chamber 10 at flow rate of 1SLM and if the pressure on the vicinity of the substrate is controlledwith the vacuum pump (not shown) to be 30 Pa, resulting in that thepressure of the plasma generation region 12 becomes 58 Pa. Under thepressure conditions, if the high frequency energy of 13.56 MHz isprovided at 1 W/cm³, the oxygen plasma has the plasma density of about10⁸ cm⁻³ and the electron temperature of about 10⁵ K. In the oxygenplasma, Debye length is about 2 mm, which is substantially equal to thediameter of the perforated hole 41. The plate 40 with the abovestructure serves as the closure of the plasma and the prevention plateof the back flow of the monosilane gas.

[0049] Referring to FIGS. 6 through 9, a remote plasma CVD apparatusaccording to another embodiment of the present invention comprises thesimilar structure of the remote plasma CVD apparatus depicted in FIG. 5except for an injection mechanism of the silane gas. Instead of theplate 40 and the injector 22, the remote plasma CVD apparatusillustrated in FIG. 6 comprises a plate 42 serving as a SiH₄ gasdistribution structure. The plate 42 comprises a top portion 45, abottom portion 46, a plurality of tube walls 47, and a plurality of gasinjection holes 43, and defines a gas supplier plenum 44. The gassupplier plenum 44 makes the silane gas uniform in a plain, therebyresulting in uniformity in the distributed silane gas. The top portion45 has a plurality of upper holes, while the bottom portion 46 has aplurality of lower holes. The tube walls 47 connect between the upperholes and the lower holes, respectively, and form the perforated holes41 that is separated or isolated from the gas supplier plenum 44.

[0050] In order to obtain more uniform SiH₄ gas distribution in thesubstrate processing region 13, the plate 42 further comprises first andsecond partitions 48 and 49 which are for dispersing the silane gas, asshown in FIGS. 10 through 12. To disperse the silane gas and obtain moreuniform silane gas, the first partition 48 and the second partition 49have a plurality of holes 481 and 491, and the number of the holes 481is less than that of the holes 491. In detail, the number of the holes481 illustrated in FIG. 11 is nine, while the number of the holes 491illustrated in FIG. 12 is twenty five. That is, the ratio of the holes481 to the holes 491 is nine twenty-fifth. In particular, the holes 481of this embodiment are formed and concentrated on the center of thefirst partition 48. The silane gas supplied to a first space between thetop portion 45 and the first partition 48 diffuses in the first space,passes through the holes 481 and flows into a second space between thefirst partition 48 and the second partition 49. The silane gas furtherspreads within the second space and then is injected into the substrateprocessing region 13, so that the more uniform SiH₄ gas distribution inthe substrate processing region 13 is obtained. The number of thepartition is not restricted to two, but may be one or greater than two.

[0051] Referring to FIG. 13, a remote plasma CVD apparatus according toanother embodiment of the present invention comprises the similarstructure of the remote plasma CVD apparatus depicted in FIG. 6 exceptfor an exhaust mechanism. The remote plasma CVD apparatus illustrated inFIG. 13 further comprises a gas outlet 25 independent of the gas outlet23, and first and second pressure gauges 71 and 72. The gas outlet 23 isarranged to communicate with the substrate processing region 13, whilethe gas outlet 25 is arranged to communicate with the plasma generationregion 12. In addition, the gas outlet 23 and the gas outlet 25 areconnected with first and second exhaust emission control devices orexternal vacuum pumps (not shown). The first and the second vacuum pumpsis for controlling exhaust emissions independently of each other, andmay comprise single exhaust emission control device if the exhaust ofthe gas outlet 23 and 25 can be independently controlled.

[0052] With the above structure, the pressure within the plasmageneration region 12 and the pressure within the substrate processingregion 13 can be controlled independently of each other if the formerpressure becomes too high.

[0053] As shown in FIGS. 14 through 16, similar modifications areapplicable to the remote plasma CVD apparatuses illustrated in FIGS. 1,4, and 5, respectively.

[0054] It is to be understood that the above description is intended tobe illustrative and not restrictive. Many embodiments and thecombinations thereof will be apparent to those of skill in the art uponreviewing the above description. For example, a monosilane injectoraccording to the above-mentioned embodiments is a ring-shaped injectoror a plate as a gas distribution structure, but the present invention isnot so limited. Those skilled in the art will recognize other equivalentof alternative injection mechanism, such as a frame-shaped injector, alatticed-pipe injector, and a straight pipe injector. In theabove-mentioned embodiment, methods of forming silicon dioxide films aredescribed, but this invention can apply to a method of forming anotherfilm, such as a silicon nitride (Si₃N₄) film or a amorphous silicon(a-Si) film, For example, the former film is made from a monosilane gasand an ammonium hydroxide gas, while the latter film is made from amonosilane gas and a rare gas or a hydrogen gas. In addition, althoughthe induction coupled remote plasma CVD apparatus and the parallel plateremote plasma CVD apparatus are described in the above-mentionedembodiments, this invention can apply to other type of apparatuses, suchas a CVD apparatus with a microwave source or an electron cyclotronresonance (ECR) source, or another CVD apparatus handling inductivecoupled plasma or helicon wave plasma.

What is claimed is:
 1. A remote plasma apparatus comprising; a bodydefining a cavity and having first and second inlets, the cavitycomprising a plasma generation region and a processing region, the firstinlet communicating with the plasma generation region to introduce afirst gas into the plasma generation region, the second inletcommunicating with the processing region to supply a second gas into theprocessing region; an energy source arranged and adapted to apply energywithin the plasma generation region to generate, from the first gas,plasma including radicals; a plate arranged between the plasmageneration region and the processing region, the plate being formed witha plurality of perforated holes which the radicals pass through, whereinaperture ratio of the perforated holes to the plate is not greater thanfive percent; and a substrate supporter arranged within the processingregion and adapted to support a substrate to be processed by using areaction between the radicals passing through the perforated holes andthe second gas supplied through the second inlet.
 2. A remote plasmaapparatus comprising a body defining a cavity and having first andsecond inlets and an inner side wall, the cavity comprising a plasmageneration region and a processing region, the first inlet communicatingwith the plasma generation region to introduce a first gas into theplasma generation region, the second inlet communicating with theprocessing region to supply a second gas into the processing region; anenergy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region with no gap left between the plate and the inner sidewall, the plate being formed with a plurality of perforated holes whichthe radicals pass through, wherein aperture ratio of the perforatedholes to the plate is not greater than five percent; and a substratesupporter arranged within the processing region and adapted to support asubstrate to be processed by using a reaction between the radicalspassing through the perforated holes and the second gas supplied throughthe second inlet.
 3. A remote plasma apparatus as claimed in claim 2,wherein the body further has first and second outlets which communicatebetween an outside of the remote plasma apparatus and the plasmageneration region and the processing region, respectively.
 4. A remoteplasma apparatus as claimed in claim 2, wherein: the plate comprises, todefine a gas supplier plenum, a top portion having a plurality of upperholes, a bottom portion having a plurality of lower holes, a pluralityof tube walls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 5. A remote plasmaapparatus comprising: a body defining a cavity and having first andsecond inlets, the cavity comprising a plasma generation region and aprocessing region, the first inlet communicating with the plasmageneration region to introduce a first gas into the plasma generationregion, the second inlet communicating with the processing region tosupply a second gas into the processing region; an energy sourcearranged and adapted to apply energy within the plasma generation regionto generate, from the first gas, plasma including radicals; a platearranged between the plasma generation region and the processing region,the plate being formed with a plurality of perforated holes which theradicals pass through arid each of which has a diameter not larger thanthree millimeter, wherein aperture ratio of the perforated holes to theplate is not greater than five percent; and a substrate supporterarranged within the processing region and adapted to support a substrateto be processed by using a reaction between the radicals passing throughthe perforated holes and the second gas supplied through the secondinlet.
 6. A remote plasma apparatus as claimed in claim 5, wherein thebody further has first and second outlets which communicate between anoutside of the remote plasma apparatus and the plasma generation regionand the processing region, respectively.
 7. A remote plasma apparatus asclaimed in claim 5, wherein: the plate comprises, to define a gassupplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 8. A remote plasmaapparatus comprising: a body defining a cavity and having first andsecond inlets and inner side wall, the cavity comprising a plasmageneration region and a processing region, the first inlet communicatingwith the plasma generation region to introduce a first gas into theplasma generation region, the second inlet communicating with theprocessing region to supply a second gas into the processing region; anenergy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region with no gap left between the plate and the inner sidewall, the plate being formed with a plurality of perforated holes whichthe radicals pass through and each of which has a diameter not largerthan three millimeter, wherein aperture ratio of the perforated holes tothe plate is not greater than five percent; and a substrate supporterarranged within the processing region and adapted to support a substrateto be processed by using a reaction between the radicals passing throughthe perforated holes and the second gas supplied through the secondinlet.
 9. A remote plasma apparatus as claimed in claim 8, wherein thebody further has first and second outlets which communicate between anoutside of the remote plasma apparatus and the plasma generation regionand the processing region, respectively.
 10. A remote plasma apparatusas claimed in claim 8, wherein: the plate comprises, to define a gassupplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 11. A remote plasmaapparatus comprising: a body defining a cavity and having first andsecond inlets, the cavity comprising a plasma generation region and aprocessing region, the first inlet communicating with the plasmageneration region to introduce a first gas into the plasma generationregion, the second inlet communicating with the processing region tosupply a second gas into the processing region; an energy sourcearranged and adapted to apply energy within the plasma generation regionto generate, from the first gas, plasma including radicals; a closureelectrode arranged within the cavity and defining the plasma generationregion in cooperation with the body, the closure electrode beingelectrically grounded to allow the radicals to pass through the closureelectrode; a plate arranged within the cavity and defining theprocessing region in cooperation with the body, the plate being formedwith a plurality of perforated holes which the radicals pass through,wherein aperture ratio of the perforated holes to the plate is notgreater than five percent; and a substrate supporter arranged within theprocessing region and adapted to support a substrate to be processed byusing a reaction between the radicals passing through the perforatedholes and the second gas supplied through the second inlet.
 12. A remoteplasma apparatus as claimed in claim 11, wherein the body further hasfirst and second outlets which communicate between an outside of theremote plasma apparatus and the plasma generation region and theprocessing region, respectively.
 13. A remote plasma apparatus asclaimed in claim 11, wherein: the plate comprises, to define a gassupplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 14. A remote plasmaapparatus comprising: a body defining a cavity and having first andsecond inlets and an inner side wall, the cavity comprising a plasmageneration region and a processing region, the first inlet communicatingwith the plasma generation region to introduce a first gas into theplasma generation region, the second inlet communicating with theprocessing region to supply a second gas into the processing region; anenergy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a closure electrode arranged within the cavity and definingthe plasma generation region in cooperation with the body, the closureelectrode being electrically grounded to allow the radicals to passthrough the closure electrode; a plate arranged within the cavity withno gap left between the plate and the inner side wall so as to definethe processing region, the plate being formed with a plurality ofperforated holes which the radicals pass through, wherein aperture ratioof the perforated holes to the plate is not greater than five percent;and a substrate supporter arranged within the processing region andadapted to support a substrate to be processed by using a reactionbetween the radicals passing through the perforated holes and the secondgas supplied through the second inlet.
 15. A remote plasma apparatus asclaimed in claim 14, wherein the body further has first and secondoutlets which communicate between an outside of the remote plasmaapparatus and the plasma generation region and the processing region,respectively.
 16. A remote plasma apparatus as claimed in claim 14,wherein: the plate comprises, to define a gas supplier plenum, a topportion having a plurality of upper holes, a bottom portion having aplurality of lower holes, a plurality of tube walls connecting betweenthe upper holes and the lower holes, respectively, and a plurality ofgas injection holes communicating with the processing region; the tubewalls form the perforated holes and separate the gas supplier plenumfrom insides of the perforated holes, respectively; and the second inletis connected to the gas supplier plenum so as to communicate with theprocessing region through the gas supplier plenum and the gas injectionholes.
 17. A remote plasma apparatus comprising: a body defining acavity and having first and second inlets, the cavity comprising aplasma generation region and a processing region, the first inletcommunicating with the plasma generation region to introduce a first gasinto the plasma generation region, the second inlet communicating withthe processing region to supply a second gas into the processing region;an energy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a closure electrode arranged within the cavity and definingthe plasma generation region in cooperation with the body, the closureelectrode being electrically grounded to allow the radicals to passthrough the closure electrode; a plate arranged within the cavity anddefining the processing region in cooperation with the body, the platebeing formed with a plurality of perforated holes which the radicalspass through and each of which has a diameter not larger than threemillimeter, wherein aperture ratio of the perforated holes to the plateis not greater than five percent; and a substrate supporter arrangedwithin the processing region and adapted to support a substrate to beprocessed by using a reaction between the radicals passing through theperforated holes and the second gas supplied through the second inlet.18. A remote plasma apparatus as claimed in claim 17, wherein the bodyfurther has first and second outlets which communicate between anoutside of the remote plasma apparatus and the plasma generation regionand the processing region, respectively.
 19. A remote plasma apparatusas claimed in claim 18, wherein: the plate comprises, to define a gassupplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 20. A remote plasmaapparatus comprising a body defining a cavity and having first andsecond inlets and inner side wall, the cavity comprising a plasmageneration region and a processing region, the first inlet communicatingwith the plasma generation region to introduce a first gas into theplasma generation region, the second inlet communicating with theprocessing region to supply a second gas into the processing region; anenergy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a closure electrode arranged within the cavity and definingthe plasma generation region in cooperation with the body, the closureelectrode being electrically grounded to allow the radicals to passthrough the closure electrode; a plate arranged within the cavity withno gap left between the plate and the inner side wall so as to definethe processing region, the plate being formed with a plurality ofperforated holes which the radicals pass through and each of which has adiameter not larger than three millimeter, wherein aperture ratio of theperforated holes to the plate is not greater than five percent; and asubstrate supporter arranged within the processing region and adapted tosupport a substrate to be processed by using a reaction between theradicals passing through the perforated holes and the second gassupplied through the second inlet.
 21. A remote plasma apparatus asclaimed in claim 20, wherein the body further has first and secondoutlets which communicate between an outside of the remote plasmaapparatus and the plasma generation region and the processing region,respectively.
 22. A remote plasma apparatus as claimed in claim 20,wherein: the plate comprises, to define a gas supplier plenum, a topportion having a plurality of upper holes, a bottom portion having aplurality of lower holes, a plurality of tube walls connecting betweenthe upper holes and the lower holes, respectively, and a plurality ofgas injection holes communicating with the processing region; the tubewalls form the perforated holes and separate the gas supplier plenumfrom insides of the perforated holes, respectively; and the second inletis connected to the gas supplier plenum so as to communicate with theprocessing region through the gas supplier plenum and the gas injectionholes.
 23. A remote plasma apparatus comprising: a body defining acavity and having first and second inlets, the cavity comprising aplasma generation region and a processing region, the first inletcommunicating with the plasma generation region to introduce a first gasinto the plasma generation region, the second inlet communicating withthe processing region to supply a second gas into the processing region;an energy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region, the plate being electrically grounded, the platebeing formed with a plurality of perforated holes which the radicalspass through, wherein aperture ratio of the perforated holes to theplate is not greater than five percent; and a substrate supporterarranged within the processing region and adapted to support a substrateto be processed by using a reaction between the radicals passing throughthe perforated holes and the second gas supplied through the secondinlet.
 24. A remote plasma apparatus as claimed in claim 23, wherein thebody further has first and second outlets which communicate between anoutside of the remote plasma apparatus and the plasma generation regionand the processing region, respectively.
 25. A remote plasma apparatusas claimed in claim 23, wherein: the plate comprises, to define a gassupplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 26. A remote plasmaapparatus comprising: a body defining a cavity and having first andsecond inlets and an inner side wall, the cavity comprising a plasmageneration region and a processing region, the first inlet communicatingwith the plasma generation region to introduce a first gas into theplasma generation region, the second inlet communicating with theprocessing region to supply a second gas into the processing region; anenergy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region with no gap left between the plate and the inner sidewall, the plate being electrically grounded, the plate being formed witha plurality of perforated holes which the radicals pass through, whereinaperture ratio of the perforated holes to the plate is not greater thanfive percent; and a substrate supporter arranged within the processingregion and adapted to support a substrate to be processed by using areaction between the radicals passing through the perforated holes andthe second gas supplied through the second inlet.
 27. A remote plasmaapparatus as claimed in claim 26, wherein the body further has first andsecond outlets which communicate between an outside of the remote plasmaapparatus and the plasma generation region and the processing region,respectively.
 28. A remote plasma apparatus as claimed in claim 26,wherein; the plate comprises, to define a gas supplier plenum, a topportion having a plurality of upper holes, a bottom portion having aplurality of lower holes, a plurality of tube walls connecting betweenthe upper holes and the lower holes, respectively, and a plurality ofgas injection holes communicating with the processing region; the tubewalls form the perforated holes and separate the gas supplier plenumfrom insides of the perforated holes, respectively; and the second inletis connected to the gas supplier plenum so as to communicate with theprocessing region through the gas supplier plenum and the gas injectionholes.
 29. A remote plasma apparatus comprising: a body defining acavity and having first and second inlets, the cavity comprising aplasma generation region and a processing region, the first inletcommunicating with the plasma generation region to introduce a first gasinto the plasma generation region, the second inlet communicating withthe processing region to supply a second gas into the processing region;an energy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region, the plate being electrically grounded, the platebeing formed with a plurality of perforated holes which the radicalspass through and each of which has a diameter not larger than threemillimeter, wherein aperture ratio of the perforated holes to the plateis not greater than five percent; and a substrate supporter arrangedwithin the processing region and adapted to support a substrate to beprocessed by using a reaction between the radicals passing through theperforated holes and the second gas supplied through the second inlet.30. A remote plasma apparatus as claimed in claim 29, wherein the bodyfurther has first and second outlets which communicate between anoutside of the remote plasma apparatus and the plasma generation regionand the processing region, respectively.
 31. A remote plasma apparatusas claimed in claim 29, wherein: the plate comprises, to define a gassupplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 32. A remote plasmaapparatus comprising: a body defining a cavity and having first andsecond inlets and inner side wall, the cavity comprising a plasmageneration region and a processing region, the first inlet communicatingwith the plasma generation region to introduce a first gas into theplasma generation region, the second inlet communicating with theprocessing region to introduce a second gas into the processing region;an energy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region with no gap left between the plate and the inner sidewall, the plate being electrically grounded, the plate being formed witha plurality of perforated holes which the radicals pass through and eachof which has a diameter not larger than three millimeter, whereinaperture ratio of the perforated holes to the plate is not greater thanfive percent; and a substrate supporter arranged within the processingregion and adapted to support a substrate to be processed by using areaction between the radicals passing through the perforated holes andthe second gas supplied through the second inlet.
 33. A remote plasmaapparatus as claimed in claim 32, wherein the body further has first andsecond outlets which communicate between an outside of the remote plasmaapparatus and the plasma generation region and the processing region,respectively.
 34. A remote plasma apparatus as claimed in claim 32,wherein: the plate comprises, to define a gas supplier plenum, a topportion having a plurality of upper holes, a bottom portion having aplurality of lower holes, a plurality of tube walls connecting betweenthe upper holes and the lower holes, respectively, and a plurality ofgas injection holes communicating with the processing region; the tubewalls form the perforated holes and separate the gas supplier plenumfrom insides of the perforated holes, respectively; and the second inletis connected to the gas supplier plenum so as to communicate with theprocessing region through the gas supplier plenum and the gas injectionholes.
 35. A remote plasma apparatus comprising: a body defining acavity and having first and second inlets, the cavity comprising aplasma generation region and a processing region, the first inletcommunicating with the plasma generation region to introduce a first gasinto the plasma generation region, the second inlet communicating withthe processing region to supply a second gas into the processing region;an energy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region, the plate being formed with a plurality of perforatedholes which the radicals pass through, wherein aperture ratio of theperforated holes to the plate is not greater than five percent andwherein neighboring ones of the perforated holes have a predeterminedinterval therebetween; and a substrate supporter arranged within theprocessing region and adapted to support a substrate to be processed byusing a reaction between the radicals passing through the perforatedholes and the second gas supplied through the second inlet, so that thepredetermined interval is shorter than another interval between theplate and the substrate to be processed when the substrate is supportedby the substrate supporter.
 36. A remote plasma apparatus as claimed inclaim 35, wherein the body further has first and second outlets whichcommunicate between an outside of the remote plasma apparatus and theplasma generation region and the processing region, respectively.
 37. Aremote plasma apparatus as claimed in claim 35, wherein: the platecomprises, to define a gas supplier plenum, a top portion having aplurality of upper holes, a bottom portion having a plurality of lowerholes, a plurality of tube walls connecting between the upper holes andthe lower holes, respectively, and a plurality of gas injection holescommunicating with the processing region; the tube walls form theperforated holes and separate the gas supplier plenum from insides ofthe perforated holes, respectively; and the second inlet is connected tothe gas supplier plenum so as to communicate with the processing regionthrough the gas supplier plenum and the gas injection holes.
 38. Aremote plasma apparatus comprising: a body defining a cavity and havingfirst and second inlets and an inner side wail, the cavity comprising aplasma generation region and a processing region, the first inletcommunicating with the plasma generation region to introduce a first gasinto the plasma generation region, the second inlet communicating withthe processing region to supply a second gas into the processing region;an energy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region with no gap left between the plate and the inner sidewall, the plate being formed with a plurality of perforated holes whichthe radicals pass through, wherein aperture ratio of the perforatedholes to the plate is not greater than five percent and whereinneighboring ones of the perforated holes have a predetermined intervaltherebetween; and a substrate supporter arranged within the processingregion and adapted to support a substrate to be processed by using areaction between the radicals passing through the perforated holes andthe second gas supplied through the second inlet, so that thepredetermined interval is shorter than another interval between theplate and the substrate to be processed when the substrate is supportedby the substrate supporter.
 39. A remote plasma apparatus as claimed inclaim 38, wherein the body further has first and second outlets whichcommunicate between an outside of the remote plasma apparatus and theplasma generation region and the processing region, respectively.
 40. Aremote plasma apparatus as claimed in claim 38, wherein: the platecomprises, to define a gas supplier plenum, a top portion having aplurality of upper holes, a bottom portion having a plurality of lowerholes, a plurality of tube walls connecting between the upper holes andthe lower holes, respectively, and a plurality of gas injection holescommunicating with the processing region; the tube walls form theperforated holes and separate the gas supplier plenum from insides ofthe perforated holes, respectively; and the second inlet is connected tothe gas supplier plenum so as to communicate with the processing regionthrough the gas supplier plenum and the gas injection holes.
 41. Aremote plasma apparatus comprising: a body defining a cavity and havingfirst and second inlets, the cavity comprising a plasma generationregion and a processing region, the first inlet communicating with theplasma generation region to introduce a first gas into the plasmageneration region, the second inlet communicating with the processingregion to supply a second gas into the processing region; an energysource arranged and adapted to apply energy within the plasma generationregion to generate, from the first gas, plasma including radicals; aplate arranged between the plasma generation region and the processingregion, the plate being formed with a plurality of perforated holeswhich the radicals pass through and each of which has a diameter notlarger than three millimeter, wherein aperture ratio of the perforatedholes to the plate is not greater than five percent and whereinneighboring ones of the perforated holes have a predetermined intervaltherebetween; and a substrate supporter arranged within the processingregion and adapted to support a substrate to be processed by using areaction between the radicals passing through the perforated holes andthe second gas supplied through the second inlet, so that thepredetermined interval is shorter than another interval between theplate and the substrate to be processed when the substrate is supportedby the substrate supporter.
 42. A remote plasma apparatus as claimed inclaim 41, wherein the body further has first and second outlets whichcommunicate between an outside of the remote plasma apparatus and theplasma generation region and the processing region, respectively.
 43. Aremote plasma apparatus as claimed in claim 41, wherein: the platecomprises, to define a gas supplier plenum, a top portion having aplurality of upper holes, a bottom portion having a plurality of lowerholes, a plurality of tube walls connecting between the upper holes andthe lower holes, respectively, and a plurality of gas injection holescommunicating with the processing region; the tube walls form theperforated holes and separate the gas supplier plenum from insides ofthe perforated holes, respectively; and the second inlet is connected tothe gas supplier plenum so as to communicate with the processing regionthrough the gas supplier plenum and the gas injection holes.
 44. Aremote plasma apparatus comprising: a body defining a cavity and havingfirst and second inlets and inner side wall, the cavity comprising aplasma generation region and a processing region, the first inletcommunicating with the plasma generation region to introduce a first gasinto the plasma generation region, the second inlet communicating withthe processing region to supply a second gas into the processing region;an energy source arranged and adapted to apply energy within the plasmageneration region to generate, from the first gas, plasma includingradicals; a plate arranged between the plasma generation region and theprocessing region with no gap left between the plate and the inner sidewall, the plate being formed with a plurality of perforated holes whichthe radicals pass through and each of which has a diameter not largerthan three millimeter, wherein aperture ratio of the perforated holes tothe plate is not greater than five percent and wherein neighboring onesof the perforated holes have a predetermined interval therebetween; anda substrate supporter arranged within the processing region and adaptedto support a substrate to be processed by using a reaction between theradicals passing through the perforated holes and the second gassupplied through the second inlet, so that the predetermined interval isshorter than another interval between the plate and the substrate to beprocessed when the substrate is supported by the substrate supporter.45. A remote plasma apparatus as claimed in claim 44, wherein the bodyfurther has first and second outlets which communicate between anoutside of the remote plasma apparatus and the plasma generation regionand the processing region, respectively.
 46. A remote plasma apparatusas claimed in claim 44, wherein: the plate comprises, to define a gassupplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region; the tube walls form the perforated holes andseparate the gas supplier plenum from insides of the perforated holes,respectively; and the second inlet is connected to the gas supplierplenum so as to communicate with the processing region through the gassupplier plenum and the gas injection holes.
 47. A remote plasmaapparatus comprising: a body defining a cavity and having first andsecond inlets and first and second outlets, the cavity comprising aplasma generation region and a processing region, the first inletcommunicating with the plasma generation region to introduce a first gasinto the plasma generation region, the second inlet communicating withthe processing region to supply a second gas into the processing region,the first and the second outlets communicating between an outside of theremote plasma apparatus and the plasma generation region and theprocessing region, respectively; an energy source arranged and adaptedto apply energy within the plasma generation region to generate, fromthe first gas, plasma including radicals; a plate arranged between theplasma generation region and the processing region, the plate beingformed with a plurality of perforated holes which the radicals passthrough, wherein aperture ratio of the perforated holes to the plate isnot greater than five percent; and a substrate supporter arranged withinthe processing region and adapted to support a substrate to be processedby using a reaction between the radicals passing through the perforatedholes and the second gas supplied through the second inlet.
 48. A remoteplasma apparatus comprising; a body defining a cavity and having firstand second inlets, the cavity comprising a plasma generation region anda processing region, the first inlet communicating with the plasmageneration region to introduce a first gas into the plasma generationregion, the second inlet being adapted to supply a second gas into theprocessing region; an energy source arranged and adapted to apply energywithin the plasma generation region to generate, from the first gas,plasma including radicals; a plate arranged between the plasmageneration region and the processing region and comprising, to define agas supplier plenum, a top portion having a plurality of upper holes, abottom portion having a plurality of lower holes, a plurality of tubewalls connecting between the upper holes and the lower holes,respectively, and a plurality of gas injection holes communicating withthe processing region, the tube walls forming a plurality of perforatedholes which the radicals pass through and separating the gas supplierplenum from insides of the perforated holes, respectively, the gassupplier plenum of the plate being connected to the second inlet so thatthe second inlet communicates with the processing region through the gassupplier plenum and the gas injection holes, wherein aperture ratio ofthe perforated holes to the plate is not greater than five percent; anda substrate supporter arranged within the processing region and adaptedto support a substrate to be processed by using a reaction between theradicals passing through the perforated holes and the second gassupplied through the second inlet.
 49. A method of forming a film byusing a remote plasma apparatus as claimed in claim 1, the methodcomprising: supplying, as the first gas, an oxygen-containing gas intothe plasma generation region through the first inlet; and supplying, asthe second gas, a silicon containing gas into the processing regionthrough the second inlet.
 50. A method of forming a film on a substrateby using a remote plasma apparatus as claimed in claim 47, the methodcomprising: connecting first and second exhaust emission control devicesto the first and the outlets, respectively; driving the first and secondexhaust emission control devices so as to obtain a specific pressurecondition where an pressure of the plasma generation region is higherthan an pressure of the processing region; and forming the film on thesubstrate under the specific pressure condition.
 51. A film formingmethod as claimed in claim 50, the method further comprising, prior tothe driving: supplying, as the first gas, an oxygen-containing gas intothe plasma generation region through the first inlet; and supplying, asthe second gas, a silicon containing gas into the processing regionthrough the second inlet.